Triggered Single?Photon Emission of Resonantly Excited Quantum Dots Grown on (111)B GaAs Substrate

In the recent decades, semiconductor quantum dots (QDs) have proven to be valuable candidates as sources for various photonic applications. Of particular interest are, due their wide-ranging applicability in communication and computation, indistinguishable photons well entangled photon pairs, which can emitted on demand. The latter require highly symmetric QDs with a small vanishing excitonic fine-structure splitting. Herein, optical properties of grown via molecular-beam epitaxy (MBE) (111)B-GaAs substrate are reported study emission terms triggered single-photon under quasi-resonant p-shell excitation, strict resonant s-shell excitation. investigations reveal very good these types QDs, especially fact, results yield almost background-free single excellent multiphoton suppression associated g(2)(0) = (0.033 ± 0.027) degree indistinguishability (41 10)%. achieved underline high quality (111)-QDs show potential applications technologies.